Posts Tagged: ddr

Samsung announced that it commenced the industry’s first volume production of 3-bit, multi-level-cell NAND flash chips using 30-nm-class process technology at the end of November.

The chips will be used in NAND flash modules accompanied by Samsung 3-bit NAND controllers to initially produce 8 GB microSD cards.

The company also announced other NAND advancements – the industry’s first mass production of its 30-nm-class, 32 Gb, MLC NAND memory with an asynchronous DDR interface.

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